| PART |
Description |
Maker |
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| LED20-SMD3 |
Mid-Infrared Light Emitting Diode
|
Roithner LaserTechnik G...
|
| LED19FC-TEC-PR |
Mid-Infrared Light Emitting Diode
|
Roithner LaserTechnik G...
|
| LED18FC-TEC |
Mid-Infrared Light Emitting Diode
|
Roithner LaserTechnik G...
|
| LED36-PR-WIN |
Mid-Infrared Light Emitting Diode
|
Roithner LaserTechnik G...
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| LNA2702L 0878 LN59 LN59L LN59-LNA2702L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
From old datasheet system
GaAs Bi-directional Infrared Light Emitting Diodes
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| PSR11D PSR11L |
composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC at the light receiving side
|
KODENSHI KOREA CORP.
|
| SIR-320ST3F |
Infrared Light Emitting Diode,Top View Type(红外光发射二极管) 红外发光二极管，顶视图类型（红外光发射二极管
Infrared light emitting diode, top view type
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Lite-On Technology, Corp.
|
| LNA2402L LNA2403F |
Infrared Light Emitting Diodes
|
Matsshita / Panasonic
|
